CoolSiC? schottky diodes G5 deliver market leading efficiency at attractive cost point. It has been optimized from all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art performance and high surge capability at competitive cost level.
Infineon's highly efficient, fast recovery 650V Rapid 1 and Rapid 2 silicon diode families combine ultrathin wafer manufacturing expertise for a low loss vertical structure plus unique cell design - the Rapid diodes provide outstanding performance. The devices complement Infineon’s existing high power 600V and 650V diode portfolio by filling the gap between silicon carbide (SiC) diodes and emitter-controlled diodes to address the ultrafast and hyperfast power silicon diode markets.
Emitter Controlled-Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and field-stop technology makes the Emitter Controlled Diode from Infineon ideally suited for consumer industry applications as it lowers the turn-on losses of the IGBT with soft recovery.
General Purpose Diodes for rectifying, switching and clamping. More than 60 types are available mainly in the packages 3,SOT323, SOT363 and TSLP. They meet the requirements for low leakage current, low switching time, high variation of permitted current and small packages resp. more elements per package.
Best-in-class RF performance and deep RF expertise. Proven high volume production guarantees highest part-to-part uniformity and long-term commitment for product offerings. As well as advanced package miniaturization technology supporting highly integrated modules.
Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes.
650V Rapid 1 Diode
Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum.
650V Rapid 2 Diode
The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.